Moessbauer effect of .BETA.-silicon nitride containing iron.

Pattern Photoresist Silicon Silicon Nitride Silicon Photoresist Silicon Nitride Silicon Etch Nitride Remove Photoresist

In this proposal we seek to establish a porous silicon based etching process in the WTC microfabrication laboratory. The new process will allow us to etch high aspect ratio holes through a wafer. Holes like these are important for decreasing the dead volume of connections between micro and macro systems and for increasing the complexity of micro-fluidic systems. At the present time, the minimum...

Memory Effect in Silicon Nitride in Silicon Devices

Amorphous silicon oxide (a-SiO2) and nitride (a-Si3N4) are two key dielectrics in microelectronic silicon devices [1]. The dominant dielectric used currently in silicon devices is a-SiO2 [1,2]. Application of silicon oxide for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of alternative dielectrics [...

Hydrogen Passivation of Interstitial Iron in Silicon by Annealing with Pecvd Silicon Nitride Films

This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900C with the silicon nitride films present. The most effective hydrogenation of iron was found ...

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Silicon Nitride and Silicon Carbide